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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBOY 900V) Fast switching speed Wide ASO Safe Operating Area(c) APPLICATIONS 800V/6A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 900 800 7 6 20 3 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=5mA ;RBE= IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 10 8 MIN 800 900 7 2SC3153 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT TYP. MAX UNIT V V V 2.0 1.5 10 10 40 |I |I V V A A Switching times ton ts tf Fall time Transition frequency ANG H M 20-40 INC L Turn-on time Storage time MIC E SE IC=0.4A ; VCE=10V DUC ON 120 15 TOR 1.0 3.0 0.7 pF MHz |I |I |I s s s IC=4A;IB1=0.8A;IB2=-1.6A RL=100| ,VCC=400V hFE-1 classifications K 10-20 15-30 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3153 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3153 CHA IN E SEM NG OND IC TOR UC 4 |
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